Study of DQE dependence with beam quality on GE Essential mammography flat panel
نویسندگان
چکیده
This paper deals with the analysis of the behavior of objective image quality parameters for the new GE Senographe Essential FFDM system, in particular its dependence with beam quality. The detector consists of an indirect conversion a-Si flat panel coupled to a CsI:Tl scintillator. The system under study has gone through a series of relevant modifications in flat panel with respect to the previous model (GE Senographe DS 2000). These changes in the detector modify its performance and are intended to favor advanced applications like tomosynthesis, which uses harder beam spectra and lower doses per exposure than conventional FFDM. Although our system does not have tomosynthesis implemented, we noticed that most clinical explorations were performed by automatically selecting a harder spectrum than that of typical use in FFDM (Rh/Rh 28-30 kV instead of Mo/Mo 28 kV). Since flat-panel optimization for tomosynthesis influences the usual FFDM clinical performance, the new detector behavior needed to be investigated. Therefore, the aim of our study is evaluating the dependence of the detector performance for different beam spectra and exposure levels. In this way, we covered the clinical beam quality range (Rh/Rh 28-30 kV) and we extended the study to even harder spectra (Rh/Rh 34 kV). Detector performance is quantified by means of modulation transfer function (MTF), normalized noise power spectrum (NNPS) and detective quantum efficiency (DQE). We found that flat-panel optimization results in slightly - but statistically significant - higher DQE values as beam quality increases, which is contrary to the expected behavior. This positive correlation between beam quality and DQE is also diametrically opposite to that of the previous model by the same manufacturer. As a direct consequence, usual FFDM takes advantage of the changes in the detector, as less exposure is needed to achieve the same DQE if harder beams are used.
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عنوان ژورنال:
دوره 12 شماره
صفحات -
تاریخ انتشار 2010